HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.
The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.2mm) allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards.
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·Ultra Low On-Resistance·P-Channel MOSFET·Very Small SOIC Package·Low Profile ( < 1.2mm)·Available in Tape & Reel
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Parameter |
Max. |
Units |
| VDS |
Drain- Source Voltage |
-30 |
V |
| ID @ TC = 25 |
Continuous Drain Current, VGS @ -10V |
-8.0 |
A |
| ID @ TC = 70 |
Continuous Drain Current, VGS @ -10V |
-6.0 |
| IDM |
Pulsed Drain Current |
-30 |
| PD @TC = 25 |
Power Dissipation |
1.5 |
W |
| PD @TC = 70 |
Power Dissipation |
0.96 |
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Linear Derating Factor |
0.012 |
W/ |
| VGS |
Gate-to-Source Voltage |
±20 |
V |
| TJ, TSTG |
Junction and Storage Temperature Range |
-55 to + 150 |
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Required Field 
